Efficient and mild modification of Si surfaces via orthogonal hetero Diels-Alder chemistry

摘要

An efficient and mild modification of Si surfaces through orthogonal hetero Diels-Alder (HDA) chemistry, was investigated. The modification of Si wafers was achieved by the silanization of pretreated Si surfaces using 3-(N-strylmethyl-2-aminoethylamino)-propyl trimethoxy silane (SM-TMS). The RAFT-HDA reaction between the PSDTF functionalized PiBA and the styryl functionalized Si surface proceeds in the absence of catalysts at 60°C. The coupling reaction between Si surfaces modified with a styrene linker and PiBA-PSDTF was performed at 60° C in chloroform solution within 12 h. The conjugation leads to the formation of a 3,6-dihydro-2H-thiopyran ring, the stability of which has been investigated and found to be withstanding relatively harsh conditions of pH and heat. The surface modification was also confirmed by measuring the thickness through ellipsometry of the Si wafers after hydrolsis.